Improvements in room temperature lifetime of pixelated TlBr detectors from surface etching

Abstract

Due to its wide band gap (2.68 eV) and high stopping power, thallium bromide (TlBr) is being investigated as a room-temperature semiconductor gamma-ray spectrometer. When cooled to −20°C, performance of better than 1% FWHM at 662 keV has been observed on 5×5×5 mm3 pixelated TlBr detectors. The room-temperature lifetime (under continuous bias) of thick TlBr detectors operated at high fields (∼2000 V/cm) has been limited to weeks or months due to polarization caused by ionic conduction. Previous work has shown that the degradation process is limited to the surface and that surface preparation techniques can extend the lifetime of thin planar TlBr devices at room temperature. In this work, the lifetime and stability of two large 5×5×5 mm3 pixelated TlBr arrays are presented. Detector performance is compared for different surface preparation techniques and improved stability is observed. Additionally, we use depth-sensing techniques to track the depth-dependent photopeak centroids over time and conclude that once surface degradation effects are mitigated, TlBr performance can improve over time at room temperature. The improvement is likely similar to conditioning at −20°C in which the electric field stabilizes and becomes more uniform.