Abstract
Effects of the heat treatment condition on the high-field superconducting performances of the surface diffusion processed V3Ga have been investigated. Ic at fields near Hc2 depends mainly on the layer thickness and Hc2 of V3Ga. The two-stage reaction process, which consists of the first reaction at the higher temperature to form a thick enough V3Ga layer and the subsequent second reaction at the lower temperature to achieve high values of Tc and Hc2, has been found to improve appreciably the Ic of SDP V3Ga in high magnetic fields. Overall Jc (including copper stabilizer) of about 2.0×104 A/cm2 at 19 T has been obtained for a ∼100-m-long V3Ga tape.
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