Abstract
Electrical properties of (Bs,Sr)TiO3 (BST) thin films are characterized with sputtered and metal organic chemical vapor deposited (MOCVD) Pt top electrodes. BST films with MOCVD Pt top electrodes, which were deposited using Pt(CF3COCHCOCF3)2 (Pt-HFA) as a precursor, showed less leakage current without bulged curves and a higher dielectric constant than those with sputtered Pt top electrodes. The improvement of electrical properties seems to result from the reduction of interface trap sites with the incorporation of fluorine atoms from HFA ligands.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
