Abstract
In this paper, different silicon oxide-based films and electrode materials were deposited onto the W/Si substrates by sputtering to investigate the resistive switching characteristics of the conductive-bridging RAM cells via the ion migration. A room-temperature constant-voltage stressing has been used to examine its effects on the resistive switching behaviors of the RAM cells in this work. Our experimental results show that the constant-voltage stressing can effectively affect the current conduction behavior and stabilize the resistive switching of the memory cell. After the electrical stressing, the current conduction mechanism in the HRS during the set process of the Cu/Cu:SiO2/W cell can be changed from the Ohm’s law and the space charge limited conduction to the single Ohm’s law.
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