Abstract

Controlling perovskite crystal growth plays an important role in improving perovskite solar cell performance. The low pressure assisted solution processing (LPSP) method was developed to improve crystalline quality of thin films and conversion efficiency of devices. It enabled to control removal speed of solvent mixtures unanimously kept in low pressure environment below 1000 Pa. Compared to common pressure condition, it produced highly (1 1 0) oriented CH3NH3PbI3−xClx thin films and devices possessed excellent PCE above 17% by LPSP. So it is effective method to enlarge grain size, optimize roughness of interface and improve carrier mobility.

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