Abstract
Effect of boron/nitrogen co-doping on the electron field emission characteristics of nanocrystalline diamond films was examined. The diamond grains, which are of faceted geometry and about 0.5–1 μm in size, vary insignificantly due to incorporation of boron and nitrogen species. Raman spectroscopies also do not change with the doping concentration. However, B/N codoping markedly improves the electron field emission properties of the diamond films. The electron field emission current density increases from (Je)B1=20 μA/cm2 for diamond films containing 1 sccm B(OCH3)7, to (Je)B3=250 μA/cm2 for those containing 3 sccm B(OCH3)3. The electron field emission capacity further increases to (Je)B3N3=1750 μA/cm2 for diamond films co-doped with 3 sccm B(OCH3)3 and 3 sccm (NH3)2CO. Atomic force microscopies reveal that the electronic structure of diamonds was markedly modified due to boron/nitrogen co-doping.
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