Improvement of Wafer-Level Cu-to-Cu Bonding Quality Using Wet Chemical Pretreatment

Abstract

We have evaluated the effect of wet chemical treatment on the interfacial bonding strength of Cu-to-Cu direct bonding. The oxide on a Cu-deposited wafer can be removed by a solution made of hydrofluoric acid and sulfuric acid (HF/H2SO4) or diluted hydrochloric acid (HCl/H2O), which can also improve the bonding quality of Cu-to-Cu bonds. Two 4-inch Cu-deposited wafers were bonded at 250 degrees C via the thermo-compression method. The interfacial adhesion energy of Cu-to-Cu bonding was quantitatively measured by the four-point bending method. After chemical pretreatment for 30 seconds with HF/H2SO4 and HCl:H2O solutions, the measured interfacial adhesion energies were 4.91 J/m2 and 5.51 J/m2, respectively. Microstructural examination of the Cu bonding interfaces showed that the interfacial bonding quality of Cu-to-Cu bonds improved under proper wet chemical etching conditions. Wafer-level cleaning by wet chemical treatment of the Cu surface was found to be a very effective way to improve the bonding quality of Cu bonds, even at bonding temperatures lower than 300 degrees C.