Abstract
We demonstrate the improved efficiency of a Cu2Zn(Sn1−xGex)Se4 (CZTGSe) thin-film solar cell with a conversion efficiency of 12.3%; this cell exhibits a greatly improved open-circuit voltage (VOC) deficit of 0.583 V and a fill factor (FF) of 0.73 compared with previously reported CZTGSe cells. The VOC deficit was found to be improved through a reduced band tailing via the control of the Ge/(Sn + Se) ratio. In addition, the high FF was mainly induced by a reduced carrier recombination at the absorber/buffer interface and/or in the space charge region, whereas parasitic resistive effects on FF were very small.
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