Improvement of transparent conductive properties of Cu films by introducing H2 into deposition atmosphere during RF magnetron sputtering

Abstract

Abstract Different thicknesses (2–250 nm) of Cu films were deposited on glass substrate by RF magnetron sputtering in Ar and Ar + H2 atmospheres at room temperature. It is found that crystallinity and conductive properties of the films enhance but visible light transmittance (TVis) decreases with increase of film thickness. Compared with the Cu films deposited in Ar, those deposited in Ar + H2 have higher crystallinity and surface roughness, and they have better conductive properties and higher TVis at film thickness above 5 nm. Overall, the Cu films deposited in Ar and Ar + H2 can be achieved higher figure of merit (FOM) in a thickness range of 3~5 and 5~8.5 nm, respectively. Furthermore, the higher FOM values of Cu film deposited in Ar + H2 atmosphere are higher than those of Cu film deposited in Ar atmosphere. The correlation between the improvement of transparent conductive properties of Cu films and modification of film microstructure due to introduction of H2 into deposition atmosphere is discussed.