Improvement of transconductance and cut-off frequency in $$\hbox {In}_{0.1}\hbox {Ga}_{0.9}\hbox {N}$$ back-barrier-based double-channel Al$$_{0.3}$$Ga$$_{0.7}$$N / GaN high electron mobility transistor by enhancing the drain source contact length ratio

Rachita Mohapatra,Pradipta Dutta

doi:10.1007/s12043-019-1866-4

Improvement of transconductance and cut-off frequency in $$\hbox {In}_{0.1}\hbox {Ga}_{0.9}\hbox {N}$$ back-barrier-based double-channel Al$$_{0.3}$$Ga$$_{0.7}$$N / GaN high electron mobility transistor by enhancing the drain source contact length ratio

Rachita Mohapatra, Pradipta Dutta

https://doi.org/10.1007/s12043-019-1866-4

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Journal: Pramana	Publication Date: Dec 18, 2019
Citations: 4

Affiliation: KIIT University

#GaN High Electron Mobility Transistor #Improvement Of Transconductance + Show 8 more

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Abstract

Improvement of transconductance and cut-off frequency in $$\hbox {In}_{0.1}\hbox {Ga}_{0.9}\hbox {N}$$ back-barrier-based double-channel Al$$_{0.3}$$Ga$$_{0.7}$$N / GaN high electron mobility transistor by enhancing the drain source contact length ratio

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