Abstract
We have investigated the thermoelectric properties of amorphous InGaZnO (a-IGZO) thin films optimized by adjusting the carrier concentration. The a-IGZO films were produced under various oxygen flow ratios [O2/(Ar + O2)] using radiofrequency magnetron sputtering. The Seebeck coefficient and electrical conductivity were measured from 100 K to 400 K. The measured Seebeck coefficient and electrical conductivity show a trade-off relation. The carrier concentration in the a-IGZO films increased with decreasing oxygen flow ratio. This result can be adequately explained by the increment of oxygen vacancies. We found that the power factor (PF) at 300 K had a maximum value of 82 × 10−6 W/m-K2, where the carrier density was 7.7 × 1019 cm−3. These results indicate that a-IGZO shows maximal PF in the transition region from nondegenerate to degenerate state.
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