Abstract
In this paper, Ni-silicide formed by co-sputtering of Ni and Ti on a boron cluster (BF2, B18H22) implanted ultra-shallow source/drain for MOSFET (metal oxide semiconductor field effect transistor) is proposed. Ni and Ti with a TiN capping layer were deposited by co-sputtering on boron cluster implanted wafer. By analysis of its sheet resistance, interfacial structures, surface morphological stability, and phase formation after post-silicidation annealing, thermal stability of Ni-silicide was found to be improved a lot.
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