Abstract
In this paper, Ni silicide is formed on boron cluster (B 18 H 22 ) implanted source/drains for shallow junctions of nano-scale CMOSFETs and its thermal stability is improved, using vacuum annealing. Although Ni silicide on B 18 H 22 implanted Si substrate exhibited greater sheet resistance than on the BF2 implanted one, its thermal stability was greatly improved using vacuum annealing. Moreover, the boron depth profile, using vacuum post-silicidation annealing, showed a shallower junction than that using N₂ annealing.
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