Abstract
This paper introduces a novel material, few layer graphene (FLG) to theoretically improve the thermal and mechanical reliability of an laterally diffused metal oxide semiconductor (LDMOS) field effect transistor (FET) under high power microwave (HPM) pulses. With graphene attached locally, on the hot spot between the gate and drain of the LDMOS. The transient lateral temperature distribution of FLG is analytically derived, and then the thermal and mechanical reduction can be calculated using our 2-D finite element method (FEM) electro-thermal-stress (E-T-S) code. The maximum temperature of the silicon region can be decreased by 35 K, and the stress of copper can be lowered by almost 16 MPa.
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