Abstract
Highly improved negative bias illumination stress stability was achieved in a Zn–Sn–O field effect transistor after an ozone (O3) treatment. The untreated ZTO FET exhibited a huge negative threshold voltage shift of 4.2 V but the O3 treated device exhibited superior stability under NBIS conditions: the Vth value of the O3 treated ZTO FET for 600 s showed almost no change (ΔVth = −0.07 V) under the same NBIS. The improvement in NBIS stability of the O3 treated ZTO FETs was attributed to the lower oxygen vacancy concentration and retarded desorption of adsorbed oxygen under photon irradiation by the O3 treatment.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
