Improvement of the ITO-p Interface In a-SI:H Solar Cells Using a Thin SiO Intermediate Layer

Abstract

AbstractThe use of ITO thin films on glass/ITO/p-i-n/metal amorphous silicon solar cells is reviewed. It is suggested a new application for silicon monoxide thin films on the ITO-p interface, as an intermediate layer, to minimize the fTO thin film deterioration process, during the early stage of exposure to a silane plasma rich in hydrogen. The thickness of the silicon monoxide thin films is chosen not to worsen the optical and electrical properties of the ITO thin films. The TO-p interface is optimized (due to impurities diffusion decrease), leading to an overall improvement of the device performance.