Abstract
The interaction between Al deposited selectively by chemical vapor deposition (CVD) and Si has been investigated. The structure of Al depended on the size of contact holes. Single-crystalline Al was formed in 0.7 µm contact holes, but polycrystalline Al in 1.2 µm and 2.0 µm holes. In the case of single-crystalline Al, Si at the bottom of contact holes was eroded uniformly by Al after deposition and after annealing at 400° C. In the case of polycrystalline Al, Si was eroded non uniformly and Al spikes were formed. However, after annealing at 400° C, Al spikes disappeared and the surface of eroded Si became extremely flat. Junction leakage current of the 2.0 µm n+ contact was found to increase after Al deposition. However, after annealing at 400° C, increase of junction leakage current was not found to 10 V. This change may be due to the improvement of the interface. These results indicate that selective Al-CVD can be used as a contact-hole-filling method.
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