Abstract
A method for significantly enhancing the breakdown field strength and energy storage density of Pb0.88La0.12ZrO3 (PLZ) films by inserting ZrO2 (ZO) layer is provided. PLZ films with the inserting layer of ZrO2 were deposited on SiO2/Si substrates buffered with LaNiO3 films by the sol-gel method. The effect of ZrO2 precursor solution concentration on structure and electrical properties was investigated. The results show that for the composite films with the sandwich structure, much improved electrical breakdown strength values of 1543 kV/cm and maximum polarization values of 83.5 μC/cm2 were obtained, which are 141% and 40% higher than pure PLZ films, respectively. With the combination of a high breakdown field strength and a large maximum polarization value, the film has an energy storage density of up to 32.6 J/cm3 when ZrO2 precursor solution concentration is 0.1 mol/L. Our results show that the design of PLZ/ZO/PLZ composite films is an effective way to obtain high energy storage density capacitors.
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