Improvement of the crystallinity in PbTiO 3 films grown on indium tin oxide-coated glass by metalorganic chemical vapor deposition using the continuous cooling process

Abstract

Metalorganic chemical vapor deposition of ferroelectric PbTiO 3 thin films in indium-tin-oxide-coated glass using Pb(tmhd) 2, Ti(OC 3H 7) 4, and N 2O via pyrolysis with several methods was performed in order to produce PbTiO 3 films with high-magnitude dielectric constants, a low dissipation factor, and high transmittance. Scanning electron microscopy showed that the surfaces of the PbTiO 3 films grown by the continuous cooling process (CCP) had the best surface morphology. The stoichiometry of the PbTiO 3 films was observed by Auger electron spectroscopy. Room-temperature current-voltage and capacitance-voltage ( C-V) measurements clearly revealed a metal-insulator-metal behavior for the PbTiO 3 insulators. The dielectric constant and the dissipation factor of the PbTiO 3 thin film grown by the CCP determined at a frequency of 10 kHz were 156 and 0.015, respectively. Optical transmittance measurements showed that the PbTiO 3 grown by the CCP had a transparency, which was approximately 85% of the transparency in the visible wavelength range. These results indicate that the PbTiO 3 thin films grown on indium-tin-oxide-coated glass by CCP have promising applications as insulator films for thin film flat-panel-electroluminescent displays.