Abstract
The purpose of this study was to fabricate the resistive random access memory (RRAM) cells that consisted of the TiO2 films and oxidized copper electrode. The sample shows better stability and larger memory window as compared with the conventional non-oxidation copper electrode. It was conjectured that the nano-tips structures and reduced copper atomic concentration of the oxidized copper electrode are favorable to form the more concentrated conductive filaments and avoid the excess residual copper atoms in the TiO2 layers of the high resistive state (OFF-state) than the conventional one. Therefore, the sample of oxidized copper electrode could exhibited the lower OFF-state current and the better endurance than the conventional non-oxidation copper electrode ones.
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