Abstract
In this study, 4H-SiC single crystal with 2-inch diameter was grown from Si-Cr-C ternary solution with Al addition and the surface morphology of specimen was improved through optimizing the growth conditions. The results suggested that the SiC single crystal grown at 0.1 MPa of He gas exhibits a relatively stable growth process with hexagonal shape and the growth rate is about 152 μm/h due to the appropriate thermal field distribution near the growth interface. In addition, the appearance of polycrystalline SiC precipitated around the seed crystal and the formation of solvent inclusions in the grown crystal could be significantly suppressed by using specially designed seed holder wrapped by BN cap. However, some pore or void defects can still be clearly observed in the grown crystal and possible improved ways aimed at reducing or eliminating pore defects are briefly summarized and the detailed research will be further discussed in the next step of our work.
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