Abstract
Ru thin films were grown by metalorganic chemical vapor deposition (MOCVD) on TiN and TEOS oxide substrates at 300oC using (2,4-demethylpentadienyl)(ethylcyclopenadienyl) ruthenium [Ru(DMPD)(EtCp)] and oxygen. Instead of conventional single step process, we investigated 2-step CVD process to enhance initial nucleation rate and reduce the incubation time for film formation. This process consisted of a seeding step, where high flow rate of oxygen and low process pressure were used, and a film growth step with low O2 flow rate and high pressure. The deposited Ru films by 2-step process have smooth surface morphologies compared to those by single step process.
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