Abstract
The relatively higher electronegative elements (M = Pd, Nb, Bi, Hg) have been partially doped at Tl sites in Cu0.5Tl0.5−xMxBa2O4−δ (x=0,0.25) charge reservoir layer of Cu0.5Tl0.5−xMxBa2Ca2Cu3O10−δ superconductor. These elements may retain more oxygen in the charge reservoir layer due to their higher electronegativity as compared to Tl, and the higher population of oxygen in the charge reservoir layer can optimize the charge carriers’ density in the conducting CuO2 planes. The optimum density of mobile charge carriers in the conducting CuO2 increases Fermi wave-vector KF and Fermi velocity vF of the carriers, which results in the improvement of superconducting properties of the material.
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