Abstract

The limitation of mechanical manufacturing will result in a small tilt angle of the sample stage in the horizontal direction, which decreases the spatial resolution of imaging in near-field scanning microwave microscopy (NSMM). In this paper, we focus on the tilt correction and improve the spatial resolution of the NSMM image. The results of electromagnetic simulation and line scan measurement demonstrate the critical parameters affecting the sensitivity of NSMM, such as the length of the probe extending out of the cavity, the tip–sample distance, and the tip apex size. The tilt images can rotate successfully to the horizontal plane with the tilt correction methods, and the local average and re-interpolation are applied to denoise the images. Experimental NSMM images of copper thin film grid, coin texture, lithography mask, and leaf vein are obtained. The images before and after correction verify the improvement of the spatial resolution with all the above methods.

Highlights

  • In recent years, the application of near-field scanning microwave microscopy (NSMM) in the characterization of microstructure materials has been regarded as one of the most important instruments

  • The detection sensitivity of NSMM directly affects the spatial resolution of the image

  • After being corrected by the tilt correction method we described, as shown in Figs. 11(c) and 11(d), part of the vein structure that masked in the original image is imaged, the image tended to be horizontal, and the spatial resolution of the NSMM image is improved, demonstrating the effectiveness of the tilt correction method

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Summary

Introduction

The application of near-field scanning microwave microscopy (NSMM) in the characterization of microstructure materials has been regarded as one of the most important instruments. In NSMM, the morphological parameter images of micro–nanostructures can be obtained, and the microwave measurement results of micro–nanostructures. NSMM is used to obtain the offsets of several measurable parameters of the sample through the single-port or dual-port coaxial resonant cavity.. NSMM is used to obtain the offsets of several measurable parameters of the sample through the single-port or dual-port coaxial resonant cavity.1–6 With these offsets, the electromagnetic parameter distribution of the material and the morphology can be obtained, and the structural character of the surface and subsurface can be presented. The applications of NSMM include imaging analysis and research on doping and defects in nanowires, superconducting materials, magnetic domain materials, and semiconductors. NSMM can reveal the conductivity in photovoltaic materials and characterization of local regions and cell imaging of biological materials or DNA molecules.

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