Abstract
The silicon based thin film transistors technological process evolution is governed by electrical performance improvements that are needed for the numerous fields of large area electronic applications. In fact, the electrical properties of the TFTs are directly linked to many aspects combining efforts to improve the process steps by several ways. All these approaches are similar to the ultra large scale integration technology (ULSI) ones. The goal of this paper is to highlight these similarities. After the presentation of the evolution during the last twenty years of the TFT processes, we will discuss on the common approaches between nano- and giga- electronics in order to show that their basic scientific principles are roughly the same.
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