Improvement of SiC–Si/MAS Interface in the Joints via In Situ Synthesizing SiC Nanowires

Abstract

Improving the SiC–Si/MAS interface is essential for enhancing the SiC–Si/MAS joint strength. In this work, well‐dispersed SiC nanowires (NWs) were in situ synthesized at the SiC–Si/MAS interface in the joints as the anchors, which made the fracture feature of the joints change from SiC–Si/MAS interface fracture to MAS fracture, resulting in an obvious improvement of the shear strength. The results showed that the average shear strength of the joints was increased by 49% by in situ synthesizing SiC NWs, which was primarily attributed to the excellent interface anchoring effects of SiC NWs involving the interfacial bonding anchoring between SiC NWs and SiC–Si layer and the mechanical interlocking anchoring between SiC NWs with the junctions and the surrounding grains. This study may provide new insight into the anchoring mechanisms and suggest a new design methodology for nanowire joints, leading to improved joint strength.