Abstract
We investigated the retention behavior of Pb(Zr,Ti)O3 (PZT) capacitors with Ir∕SrRuO3 (SRO) top electrodes. The capacitors with Pt and Ir∕IrO2 top electrodes were also prepared for comparison. The opposite state retention characteristic of the PZT capacitor was significantly improved by using an Ir∕SRO top electrode structure. The nonvolatile polarization of the opposite state retention was kept at 96% of its initial value even after a 100h baking test at 150°C, while those of Pt and Ir∕IrO2 were 36 and 59%, respectively. The retention enhancement is attributed to the effective inhibition of defect generation on the interface between PZT and SRO.
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