Abstract
A noncrystalline, low-resistance La0.7Ca0.3MnO3 (LCMO) thin film was deposited by pulsed laser deposition at the substrate temperature of 550 °C and the oxygen pressure of 1 Pa. The low resistance of the resultant film was derived from the large leakage current due to the noncrystallinity of the LCMO film. Ag, Al and Ag–50%Al alloy metals were selected as top electrodes (TEs) on the LCMO film with a Pt bottom electrode to form Ag, Al, Ag–50%Al/LCMO/Pt multilayer units. It was found that stable bipolar resistive switching was only obtained in Al–50%Ag/LCMO/Pt units. Obvious hysteresis and ‘current leaps’ phenomena occurred clearly in I–V curves of high original resistance units with an Al–50%Ag TE. The low original resistance units can be turned to high resistance by a voltage sweep. Based on these results, a model was proposed to explain the switching properties of the Al–50%Ag/LCMO/Pt units, which will be helpful to improve the switching uniformity of RRAM devices.
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