Abstract
The switching mechanisms of resistive random access memories (ReRAMs) were strongly related to the formation and rupture of conduction filaments (CFs) in the transition metal oxide (TMO) layer. The novel method approached to enhance the electrical characteristics of ReRAMs by introducing of the local insertion of the low-k dielectric layer inside the TMO layer. Simulation results showed that the insertion of the low-k dielectric layer in the TMO layer reduced the switching volume and the generation of CFs. The large variation of resistive switching properties was caused by the stochastic characteristics of the CFs, which was involved in switching by generation and rupture. The electrical characteristics of the novel ReRAMs exhibited a low reset current of below 20 microA, the high uniformity of the resistive switching, and the narrow variation of the resistance for the high resistance state.
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