Improvement of Reliability Characteristics of TiO2-Based Resistive Switching Memory Device with an Inserted ZnO Layer

Abstract

TiO2-based resistive switching memory devices with an inserted ZnO layer were fabricated, and the effect of inserting a ZnO layer between the TiO2 and bottom electrode on the reliability characteristics of TiO2-based memory devices was investigated. The improved endurance and retention performances were achieved in the TiO2-based memory device fabricated with an inserted ZnO layer. The mechanism of reliability improvement was discussed. The inserted ZnO layer is proposed to adjust the distribution of oxygen vacancies across the TiO2 layer due to the lower formation energy of oxygen vacancy in ZnO, which may be responsible for the improved reliability characteristics in the TiO2-based memory device with an inserted ZnO layer.