Abstract
The influences of In‐component‐graded InGaN barrier on the performances of InGaN light emitting diodes (LEDs) are studied. The results show that LEDs with In‐component linearly graded InGaN barrier exhibit better performances of radiative recombination rate and efficiency droop than reference LED with constant‐In‐component InGaN barrier. At 150 mA, the external quantum efficiencies for LED A with constant‐In‐component InGaN barrier, LED B with the In‐component linearly increasing in the InGaN barrier, and LED C with the In‐component linearly decreasing in the InGaN barrier are 30.30%, 36.66%, and 34.03%, respectively. Among the three sets of LED samples, LED B, with the In‐component linearly increasing in the InGaN barrier, has the highest radiative recombination rate due to suppression of quantum confinement stark effect and enhancement of carrier confinement effect in the active layer. The efficiency droop for LED A, LED B, and LED C is 34.83%, 25.67%, and 16.67%, respectively. Analysis indicates that the efficiency droop is mainly determined by the hole injection efficiency and electron leakage from the active layer. LED C with the In‐component linearly decreasing in the InGaN barrier has the lowest efficiency droop due to improved hole injection efficiency and reduced electron leakage.
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