Abstract
The device characteristics of the excimer laser recrystallize low temperature poly-Si (polycrystalline silicon) thin-film transistor (TFT) has been improved by employing an oxygen plasma pretreatment on the active amorphous silicon layer prior to the laser crystallization. The oxygen plasma pretreatment has reduced the number of interface traps and increased the field effective mobility in the polysilicon TFT. The device stability of the oxygen plasma pretreated TFTs under the dc stress has been improved due to strong Si-O bond formation during the laser recrystallization.
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