Abstract
In recent years many attempts have been made to use the outstanding properties of GaAs for microwave devices such as Schottky diodes, FET's and transferred electron devices, especially in integrated circuits. Usually n-type layers (active layers) are grown epitaxially onto a semi insulating substrate, either by liquid phase (LPE) or vapor-phase epitaxy (VPE). In our work liquid-phase growth was used, only. One of the major problems not yet overcome successfully is the deterioration of device parameters deduced from pulse bias measurements, if the devices are operated under dc bias conditions. In this paper the reasons for the deterioration as well as some means of avoiding it will be described.
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