Improvement of piezoresistance properties of silicon carbide ceramics through co-doping of aluminum nitride and nitrogen

Abstract

The piezoresistance coefficient was measured on co-doped silicon carbide ceramics. Evaluation samples of α-silicon carbide ceramics were first fabricated by glass capsule HIP method using powder mixture of silicon carbide and aluminum nitride with various ratios. The resultant aluminum nitride added silicon carbide ceramics were doped with nitrogen by changing the post-HIP nitrogen gas pressure. The lattice parameter increased with the amount of adding aluminum nitride indicating that the incorporated aluminum substituted smaller silicon atoms. After post-HIP treatment, lattice parameter then decreased with nitrogen gas pressure. The piezoresistive coefficient increased with the addition of aluminum nitride, it further increased with the nitrogen doping pressure.