Year-end Sale % OFF 
Abstract
AbstractAn amorphous boron nitride (aBN) layer is inserted between Cu2ZnSn(S,Se)4 (CZTSSe) films and Mo back electrode of CZTSSe solar cell by magnetron sputtering to mitigate the carrier recombination at back interface by tuning energy band alignment and suppressing formation of secondary phases and Mo(S,Se)2. The effect of the aBN layer on power conversion efficiency (PCE) of CZTSSe solar cell is investigated by numerical simulation and experiment. It is found that PCE is greatly improved via the insertion of suitable thick aBN layer, which is attributed to increased open‐circuit voltage (VOC) and fill factor (FF). By quantitative analysis, it is deduced that the increased VOC originates mainly from decrease in reverse saturation current density (J0), followed by increase in shunt resistance (RSh), and the increased FF is mainly due to the decreased J0, followed by increased RSh and decreased photogenerated current density (JL). By optimizing aBN thickness through tuning sputtering time, the PCE increases from 8.68% of CZTSSe solar cell without the aBN layer to 9.51% of the CZTSSe solar cell with aBN layer. The influence mechanism of the aBN layer on the PCE is suggested by analyzing quantitatively the effect of the aBN layer on JL and electrical parameters.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
