Improvement of photoluminescence characteristics of AlGaInP double hetero-structures grown by OMVPE

Abstract

Photoluminescence (PL) characteristics of AlGaInP double hetero-structures grown on a (100) GaAs substrates were studied as function of the active layer composition and the growth temperature. When the active layer Al concentration was increased, the PL peak wavelength was shorter, and the PL intensity was smaller. On the other hand, when the growth temperature was increased, the PL peak wavelength was also shorter, but the PL intensity was about the same, or even larger. Measurements of the PL lifetime and the excitation power dependence of the PL intensities suggest that samples grown at higher temperature contain fewer recombination centers.