Improvement of Optical and Thermal Properties for Quantum Dots WLEDs by Controlling Layer Location

Abstract

The inorganic halide perovskite quantum dots (QDs) have been considered as a promising substitute for white light-emitting diodes (WLEDs). In this paper, the green CsPbBr 3 QDs and red K 2 SiF 6 :Mn 4+ (KSF) phosphor were used to fabricate the conversion layers. Because the location of the layers is fundamental to the absorption priority of blue light, the location of KSF and QDs were controlled and the QDs-up type and QDs-down type WLEDs were made. The optical power, luminous efficiency, CCE, and luminous intensity in the middle of QDs-up type are 13.83 mW, 13.54 lm/W, 11.94%, and 2.65 cd, meaning 24.26%, 25.72%, 2.63%, and 23.83% higher than those of QDs-down type, respectively. In addition, the QDs-up type has a lower correlated color temperature (CCT) shift of 734 K and a decreased highest temperature of 56.8° (51.5% and 14.9% lower). These key property differences indicate that the QDs-up type is more suitable for the application in display and backlight. In order to explore the reasons for these differences, the emission spectra, CCE, reflection rate, absorption rate, and temperature curves of QDs or KSF films were also analyzed, which provided a better understanding of designing package structures.