Abstract
A newly synthesized organic material, oligo(3-methylsulfanylthiophene), was applied as an adhesive interlayer between the gold source/drain electrodes and the pentacene semiconductor layer in flexible, bottom-gated, organic thin film transistors (OTFTs). The cyclic bending tests showed that the electrical properties of the devices with the thermally evaporated interlayer were more stable than those of the device with no interlayer. The interlayer also reduced the contact resistance between Au and the pentacene layer. These results indicate that the interlayer is very useful in enhancing the mechanical and electrical stabilities of the OTFTs under repetitive mechanical bending as well as the electrical performance.
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