Abstract
We investigated the impact of annealing the Ta/Pt buffer layers on the magnetic properties of Ta/Pt/Co/Pt ultra thin-layers. A controlled annealing up to 500 °C leads to the decrease of perpendicular magnetic anisotropy (PMA) and an improvement of the domain wall dynamics. A strong decrease of depinning field is observed in the annealed samples. The decrease of PMA also leads to a considerable increase of the domain wall mobility in the precessional regime. This annealing procedure therefore boosts domain wall velocity, helping to improve future spintronic applications.
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