Abstract
We study high-quality Co2FeSi1−xAlx Heusler compound/Si (0 ≤ x ≤ 1) heterointerfaces for silicon (Si)-based spintronic applications. In thermal treatment conditions, the magnetic and structural stabilities of the Co2FeSi1−xAlx/Si heterointerfaces are improved with increasing x in Co2FeSi1−xAlx. Compared with L21-ordered Co2FeSi/Si, B2-ordered Co2FeAl/Si can suppress the diffusion of Si atoms into the Heusler-compound structure. This experimental study will provide an important knowledge for applications in Si-based spin transistors with metallic source/drain contacts.
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