Abstract
Bismuth magnesium niobate (BMN) thin films deposited on substrates at by pulsed laser deposition were investigated for the effect of plasma treatment on dielectric and leakage current characteristics. The dielectric constant and dissipation factor of thick films slightly decrease with increasing oxygen content in atmosphere of plasma treatment. The leakage current densities were improved with increasing oxygen content. The capacitance density and breakdown voltage of the films treated with (standard ) were approximately and , respectively. On the other hand, thick BMN films treated by plasma at exhibit a leakage current density of approximately at and a breakdown voltage above which is possible for embedded capacitor applications.
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