Abstract
In this study, an ultra‐thin MoO3 layer synthesized by a solution‐based technique is introduced as a promising interfacial layer to improve the performance of kesterite Cu2ZnSnSe4 (CZTSe) solar cell. Solar cells with 10 nm of MoO3 between Mo rear contact and CZTSe had larger minority carrier life time and open‐circuit voltage compared to the reference solar cells. Temperature dependent current density–voltage measurement indicated that the activation energy (EA) of the main recombination is higher (∼ 837 meV) in solar cells with MoO3 layer, as compared to conventional solar cells where EA ∼ 770 meV, indicating reduced interface recombination. A best efficiency of 7.1% was achieved for a SLG/Mo/MoO3/CZTSe/CdS/TCO solar cell compared to the reference solar cell SLG/Mo/CZTSe/CdS/TCO for which 5.9% efficiency was achieved.
Highlights
Kesterite compounds including Cu2ZnSn(Sx,Se1-x)4 (CZTSSe) [1,2,3,4], Cu2Zn(Sny,Ge1y)(Sx,Se1-x)4 [5,6], (Cuz,Ag1-z)2ZnSn(Sx,Se1-x)4 [7] are considered as promising candidates for earth abundant thin film photovoltaic technology
Despite these advantages two main problems are attributed to the Mo rear contact in kesterite solar cells: (i) The decomposition reactions due to the instability of the Mo/kesterite interface that leads to the formation of secondary phases and voids at the rear surface that affect the film growth, and introduces defects into the absorber layer [16,25]. (ii) The existence of a Schottky barrier at the Mo/ kesterite interface suppresses the Corresponding author; e-mail samaneh.ranjbar@ua.pt, Phone: +32 16287726
To address these issues related to the Mo rear contact, different interfacial layers have been introduced between the Mo and absorber layer
Summary
Kesterite compounds including Cu2ZnSn(Sx,Se1-x)4 (CZTSSe) [1,2,3,4], Cu2Zn(Sny,Ge1y)(Sx,Se1-x)4 [5,6], (Cuz,Ag1-z)2ZnSn(Sx,Se1-x)4 [7] are considered as promising candidates for earth abundant thin film photovoltaic technology. In this study an ultra-thin MoO3 layer synthesized by a solution based technique is introduced as a promising interfacial layer to improve the performance of kesterite Cu2ZnSnSe4 (CZTSe) solar cell.
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