Improvement of intersubband absorption in asymmetric quantum wells based on GaN/AlInN

Abstract

In the present work, we have considered an unconstrained asymmetric quantum wells based on GaN/AlInN with 17.7% of Indium in the barrier materiel. Three energy levels could be confined thus giving authorized transitions. Our calculations were made in parabolic and non-parabolic cases. In the case of a small well width L w , the transition E 12 is located above E 23 and vice versa for large well width. We clearly record an intersection between these two transitions ( E 12 = E 23 ) for L w close to 2. 5 nm. This enhances the absorption of such a photon with appropriate frequency. We have studied the temperature effect on the Fermi level, and the population of load carriers in each level for this interesting structure. As well as the intersubband absorption and the oscillation force of each transitions. Such structures can be used in two photons absorption devices. • Study of an unconstrained GaN/AlInN quantum wells. • The calculations are developed using the finite difference method in parabolic and non-parabolic cases. • The absorption enhancement of such photons with appropriate frequency. • Study the temperature effect on the Fermi level and the population of load carriers. • Study of the intersubband absorption and the oscillation force of each transition.