Abstract
The high-temperature creep resistance in Al2 O3 is improved greatly by ZrO doping. Zirconium ions are found to be segregated in Al O grain boundaries. The activation energies for creep in high-purity Al2 O3 and ZrO-doped Al O are - estimated to be 430 and 650 kJ mol1, respectively. The grain boundary diffusivity of Al ions is expected to be reduced by the segregation of Zr4+ in the grain boundaries.
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