Improvement of green InGaN-based LEDs efficiency using a novel quantum well structure**Project supported by the National Key Research and Development Program of China (Grant Nos. 2016YFB0400300 and 2016YFB0400600), the National Natural Science Foundation of China (Grant Nos. 11574362, 61210014, and 11374340), and the Innovative Clean-Energy Research and Application Program of Beijing Municipal Science and Technology Commission (Grant No. Z151100003515001).

Abstract

The green light emitting diodes (LEDs) have lower quantum efficiency than LEDs with other emission wavelengths in the visible spectrum. In this research, a novel quantum well structure was designed to improve the electroluminescence (EL) of green InGaN-based LEDs. Compared with the conventional quantum well structure, the novel structure LED gained 2.14 times light out power (LOP) at 20-mA current injection, narrower FWHM and lower blue-shift at different current injection conditions.