Improvement of Ge-on-Si photodiodes by black silicon light trapping

Abstract

A light-trapping scheme for normal incidence Ge-on-Si photodiodes, utilizing needle-like black silicon nanostructures is presented. Simulations reveal that light absorption in thin rear Ge films can be enhanced several times due to both the antireflection and the scattering effect of the nanostructure. It is shown that especially films with thicknesses ≤100 nm benefit from the black silicon nanostructure, e.g., resulting in a 5 to 10 times higher absorptance at 1500 nm for a 100 nm thick film. Theoretical predictions are experimentally proved by reflectance-transmittance measurements of crystalline Ge films sputtered on black silicon substrates.