Abstract
A sapphire-etched vertical-electrode nitride semiconductor (SEVENS) light-emitting diode (LED) is fabricated by means of a selective chemical wet-etching technique. The SEVENS-LED formed on sapphire substrate exhibits excellent device performance compared to a conventional NiAu lateral-electrode (LE) GaN-based LED formed on the same sapphire substrate. The integral light-output power of SEVENS-LED is /spl sim/7 mW, which is 1.75 times stronger than that of the conventional NiAu LE-LED (/spl sim/4 mW). The external quantum efficiency of SEVENS-LED is estimated to be approximately 13%.
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