Improvement of Flux Pinning Properties of RE123 Materials by Chemical Doping

Abstract

Improvement of flux pinning properties of RE123 single crystals and melt-solidified bulks was attempted by dilute doping of impurity elements to various cation sites except the Cu at the CuO2 plane. All the examined dilute doping for RE123, such as Sr to Ba-site, Lu to Y-site and Co to Cu-site in the CuO-chain, was found to increase critical current density, Jc, particularly under magnetic fields accompanying enhanced second peak effect. These results suggest that the dilute doping is universally effective for improving the critical current properties of the RE123 system independent of the doped cation sites.