Abstract
Ferroelectric and leakage current behaviors of Zn-Mn co-doped polycrystalline BiFeO3 (BFO) thin films fabricated by a pulsed laser deposition were investigated in comparison with un-doped BFO thin films. Ferroelectric hysteresis loop was observed in Zn-Mn co-doped BFO film capacitor: 2P r = 109 μC/cm2 and 2E C = 674 kV/cm with maximum electric field of 600 kV/cm. And leakage current was reduced with Zn-Mn co-doping at low electric field region and 10 mol% Bi-excess BFO film has best leakage current behavior in a wide electric field range.
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