Improvement of τf in HfTiO4 microwave dielectric ceramics with Zr‐ and Sn‐substitution

Abstract

Abstract(Hf1‐xZrx)TiO4 and (Hf1‐xSnx)TiO4 ceramics were prepared through a standard solid‐state reaction route, and the microwave dielectric characteristics were determined together with the microstructures. The single‐phase solid solution in space group Pbcn was obtained in (Hf1‐xZrx)TiO4, while the two‐phase structure with (HfTiO4(s.s.) major phase in space group Pbcn and Sn0.3Ti0.7O2 secondary phase in space group P42/mnm) was determined in (Hf1‐xSnx)TiO4. The temperature coefficient of resonant frequency τf could be significantly improved to near‐zero in both systems, and the best combination of microwave dielectric characteristic was achieved at x = 0.5 in (Hf1‐xZrx)TiO4: εr = 39.0, Qf = 43,150 GHz at 5.3 GHz and τf = 3 ppm/°C, and at x = 0.225 in (Hf1‐xSnx)TiO4: εr = 37.2, Qf = 52,600 GHz at 5.5 GHz and τf = ‐6 ppm/°C. In the solid solutions, the obvious improvement of τf could be deeply linked with the degree of covalency and the restoring forces of structure. While, the intermediate near‐zero τf is achieved by mixing the phases with opposite τf in multiphase materials. The present work provided an effective way to modify the temperature coefficient of resonant frequency in microwave dielectric ceramics.